K4B1G1646G-BCNB 

1. Product Overview

The K4B1G1646G-BCNB is a DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung Semiconductor. 

This memory component is designed for high-performance computing applications that require reliable data storage and fast access speeds.

Key Specifications:

• Capacity: 1Gb (Gigabit)

• Organization: 64M x 16

• Data Rate: 2133 Mbps (Million bits per second)

• Operating Voltage: 1.5V

• Temperature Range: 0°C to +85°C

• Package Type: 96-ball FBGA (Fine-pitch Ball Grid Array)

• Internal Banks: 8

• Generation: 8th Generation DDR3 

2. Technical Features

The K4B1G1646G-BCNB incorporates several advanced technological features that make it suitable for modern electronic systems:

High-Speed Performance:

• Supports data transfer rates up to 2133 Mbps

• Utilizes DDR3 technology that transfers data on both the rising and falling edges of the clock signal, 

• effectively doubling the data rate compared to single data rate memories 

Low Power Design:

• Operates at standard DDR3 voltage of 1.5V

• Includes power-saving features common to DDR3 architecture 

High Reliability:

• FBGA packaging provides better thermal performance and mechanical stability compared to traditional packages

• Designed for industrial temperature range (0°C to +85°C) ensuring stable operation in various environments 

High Density:

• 1Gb capacity in a compact 96-ball FBGA package

• 64M x16 organization provides flexible memory addressing 

3. Applications

The K4B1G1646G-BCNB finds application in various electronic systems that require moderate-capacity, high-speed memory:

Computing Systems:

• Desktop and laptop computers

• Workstations requiring reliable memory performance 

Embedded Systems:

• Industrial control systems

• Medical equipment

• Automotive electronics (non-safety critical applications) 

Consumer Electronics:

• Smart TVs and set-top boxes

• Gaming consoles

• Networking equipment 

Communication Devices:

• Routers and switches

• Base station equipment

• Telecom infrastructure 

4. Pin-Compatible/Functional Equivalent Models

Several alternative models offer similar functionality and pin compatibility with the K4B1G1646G-BCNB:

Samsung Series Variants:

• K4B1G1646G-BCNB0

• K4B1G1646G-BCNB000

• K4B1G1646G-BCNBT00

• K4B1G1646G-BCNB0DT 

• K4B1G1646I-BCNB (same specifications with minor variant differences) 

Cross-Manufacturer Alternatives:

• IS43TR16640B-093NB (Integrated Silicon Solution Inc.)

• IS43TR16640B-093NBL

• IS43TR16640B-093NBL-TR

• IS43TR16640B-093NBLC 

These alternatives maintain the same 96-ball FBGA package, 1.5V operating voltage,

 2133 Mbps speed, and temperature range, ensuring drop-in replacement capability in most designs .

5. Series Comparison and Evolution

The K4B1G1646G-BCNB belongs to Samsung's DDR3 memory family. 

Understanding its position in the memory technology evolution helps in system design decisions:

DDR3 vs. DDR4 Comparison:
While the K4B4G1646E-BCNB (a DDR4 variant) offers:

• Higher density (4Gb vs. 1Gb)

• Faster data rates (up to 3200 Mbps)

• Lower voltage (1.35V for DDR4L)

• Improved power efficiency 

The K4B1G1646G-BCNB remains relevant for:

• Legacy systems requiring DDR3 compatibility

• Cost-sensitive applications

• Systems where power consumption differences are negligible 

Samsung DDR3 Series Variants:
The K4B1G1646G-BCNB is part of a broader family including:

• K4B1G0846G-BCK0 (lower density variant)

• K4B1G0846G-BCH9

• K4B1G1646E-HCH9 (different package/temperature variant)

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