Toshiba Semiconductor and Storage TK7J90E,S1E

TK7J90E,S1E
Part No.:
TK7J90E,S1E
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Transistors - FETs, MOSFETs - Single
Package:
TO-3P(N)
Datasheet:
Deyee Tech  LimitedTK7J90E,S1E.pdf
Description:
MOSFET N-CH 900V 7A TO3P
Quantity:

Unit Price:$0

Ext Price:$0

Product details

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Packaging:
Tube
Series:
π-MOSVIII
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
900 V
Current-ContinuousDrain(Id)@25°C:
7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
2Ohm @ 3.5A, 10V
Vgs(th)(Max)@Id:
4V @ 700µA
GateCharge(Qg)(Max)@Vgs:
32 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
1350 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
200W (Tc)
OperatingTemperature:
150°C (TJ)
MountingType:
Through Hole
Category:
Transistors - FETs, MOSFETs - Single
Datasheet:
Deyee Tech  LimitedTK7J90E,S1E.pdf

1. How to order TK7J90E,S1E on Deyee Tech Limited?

Currently, Deyee Tech Limited only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Deyee Tech Limited guarantee that TK7J90E,S1E is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the TK7J90E,S1E. All suppliers must pass our qualification reviews before they can publish their products including TK7J90E,S1E on Deyee Tech Limited; we pay more attention to the channels and quality of TK7J90E,S1E products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the TK7J90E,S1E price and inventory displayed accurate?

The price and inventory of TK7J90E,S1E fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

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Warm Tips: Some orders in certain payment forms may require handling fee.

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Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of TK7J90E,S1E?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TK7J90E,S1E we delivered, we will accept the replacement or return of the TK7J90E,S1E only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK7J90E,S1E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TK7J90E,S1E pin diagram, TK7J90E,S1E datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image TK7A90E,S4X TK9A90E,S4X TK7J90E,S1E TK10J80E,S1E TK40J20D,S1F(O
Part Number TK7A90E,S4X TK9A90E,S4X TK7J90E,S1E TK10J80E,S1E TK40J20D,S1F(O
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Packaging Tube Tube Tube Tube Tube
Series π-MOSVIII π-MOSVIII π-MOSVIII π-MOSVIII π-MOSVIII
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V 900 V 900 V 900 V 900 V
Current-ContinuousDrain(Id)@25°C 7A (Ta) 7A (Ta) 7A (Ta) 7A (Ta) 7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 2Ohm @ 3.5A, 10V 2Ohm @ 3.5A, 10V 2Ohm @ 3.5A, 10V 2Ohm @ 3.5A, 10V 2Ohm @ 3.5A, 10V
Vgs(th)(Max)@Id 4V @ 700µA 4V @ 700µA 4V @ 700µA 4V @ 700µA 4V @ 700µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V 32 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 1350 pF @ 25 V 1350 pF @ 25 V 1350 pF @ 25 V 1350 pF @ 25 V 1350 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 200W (Tc) 200W (Tc) 200W (Tc) 200W (Tc) 200W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

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